JPH0243337B2 - - Google Patents

Info

Publication number
JPH0243337B2
JPH0243337B2 JP56000617A JP61781A JPH0243337B2 JP H0243337 B2 JPH0243337 B2 JP H0243337B2 JP 56000617 A JP56000617 A JP 56000617A JP 61781 A JP61781 A JP 61781A JP H0243337 B2 JPH0243337 B2 JP H0243337B2
Authority
JP
Japan
Prior art keywords
emitter
electrode
impurity region
region
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56000617A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57114277A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56000617A priority Critical patent/JPS57114277A/ja
Publication of JPS57114277A publication Critical patent/JPS57114277A/ja
Publication of JPH0243337B2 publication Critical patent/JPH0243337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
JP56000617A 1981-01-06 1981-01-06 Semiconductor device Granted JPS57114277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56000617A JPS57114277A (en) 1981-01-06 1981-01-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000617A JPS57114277A (en) 1981-01-06 1981-01-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57114277A JPS57114277A (en) 1982-07-16
JPH0243337B2 true JPH0243337B2 (en]) 1990-09-28

Family

ID=11478682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000617A Granted JPS57114277A (en) 1981-01-06 1981-01-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57114277A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074658U (ja) * 1993-06-23 1995-01-24 株式会社サンレール 手摺りの取付装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8159048B2 (en) * 2004-01-30 2012-04-17 Triquint Semiconductor, Inc. Bipolar junction transistor geometry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074658U (ja) * 1993-06-23 1995-01-24 株式会社サンレール 手摺りの取付装置

Also Published As

Publication number Publication date
JPS57114277A (en) 1982-07-16

Similar Documents

Publication Publication Date Title
JPH0324791B2 (en])
US4607273A (en) Power semiconductor device
US5592026A (en) Integrated structure pad assembly for lead bonding
JPH049378B2 (en])
US5130784A (en) Semiconductor device including a metallic conductor for preventing arcing upon failure
JPH0243337B2 (en])
US2827599A (en) Transistor
JP2000261004A (ja) 半導体装置
JP2627330B2 (ja) 電圧降下制御ダイオード
JPH08130317A (ja) 抵抗性フィ−ルドプレ−トを備えた半導体装置
JPH0758228A (ja) 集積化デバイス
JPH0551184B2 (en])
JPS5938056Y2 (ja) 半導体開閉装置
JP2881907B2 (ja) 電力用半導体装置
JP2525558Y2 (ja) 半導体装置
JPS642441Y2 (en])
JP3128958B2 (ja) 半導体集積回路
JPS61129867A (ja) 半導体装置
JP2809747B2 (ja) 絶縁ゲート付ターンオフサイリスタ
JPH0414939Y2 (en])
JPH0513768A (ja) 絶縁ゲート型バイポーラトランジスタ
JPS59225567A (ja) ゲ−トタ−ンオフサイリスタ
JP2582716Y2 (ja) 電圧制御型スイッチング素子
JPH0110937Y2 (en])
JPH0526770Y2 (en])